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JS28F256P33BFE 数据表(PDF) 44 Page - Micron Technology |
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JS28F256P33BFE 数据表(HTML) 44 Page - Micron Technology |
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44 / 90 page ![]() P33-65nm Datasheet Aug 2009 44 Order Number: 320003-08 12.3 Power Supply Decoupling Flash memory devices require careful power supply de-coupling. Three basic power supply current considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks produced when CE# and OE# are asserted and deasserted. When the device is accessed, many internal conditions change. Circuits within the device enable charge-pumps, and internal logic states change at high speed. All of these internal activities produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and correct de-coupling capacitor selection suppress transient voltage peaks. Because Numonyx MLC flash memory devices draw their power from VCC, VPP, and VCCQ, each power connection should have a 0.1 µF ceramic capacitor to ground. High- frequency, inherently low-inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor should be placed between power and ground close to the devices. The bulk capacitor is meant to overcome voltage droop caused by PCB trace inductance. Figure 13: Reset Operation Waveforms (A) Reset during read mode (B) Reset during program or block erase P1 ≤ P2 (C) Reset during program or block erase P1 ≥ P2 V IH V IL V IH V IL V IH V IL RST# [P] RST# [P] RST# [P] Abort Complete Abort Complete V CC 0V V CC (D) VCC Power-up to RST# high P1 R5 P2 P3 P2 R5 R5 |
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