JS28F256P33BFE datasheet(67/90 Pages) MICRON

67 / 90 page

Datasheet

Aug 2009

Order Number:320003-08

P33-65nm

Table 36: Partition and Erase Block Region Information

Figure 30: Burst Read Information

Offset(1) Length

Description

Hex

P = 10Ah

(Optional flash features and commands)

Add. Code

Value

(P+1D)h

127:

--05

32 byte

(P+1E)h

128:

--04

(P+1F)h

129:

--01

(P+20)h

Synchronous mode read capability configuration 2

12A:

--02

(P+21)h

Synchronous mode read capability configuration 3

12B:

--03

(P+22)h

Synchronous mode read capability configuration 4

12C:

--07

Cont

Page Mode Read capability

bits 0–7 = “n” such that 2n HEX value represents the number of

read-page bytes. See offset 28h for device w ord w idth to

determine page-mode data output w idth. 00h indicates no

read page buffer.

Synchronous mode read capability configuration 1

Bits 3–7 = Reserved

Bits 0–2 “n” such that 2n+1 HEX value represents the maximum number of

continuous synchronous reads w hen the device is configured for its maximum

w ord w idth. A value of 07h indicates that the device is capable of continuous

linear bursts that w ill output data until the internal burst counter reaches the end

of the device’s burstable address space. This field’s 3-bit value can be w ritten

directly to the Read Configuration Register bits 0–2 if the device is configured

for its maximum w ord w idth. See offset 28h for w ord w idth to determine the

burst data output w idth.

Number of synchronous mode read configuration fields that follow . 00h

indicates no burst capability.

Offset(1)

See table below

P = 10Ah

Description

Address

Bottom

Top

(Optional flash features and commands)

Len

Bot

Top

(P+23)h (P+23)h

12D:

Number of device hardw are-partition regions w ithin the device.

x = 0: a single hardw are partition device (no fields follow ).

x specifies the number of device partition regions containing

one or more contiguous erase block regions.

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