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JS28F256P33BFE 数据表(PDF) 53 Page - Micron Technology |
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JS28F256P33BFE 数据表(HTML) 53 Page - Micron Technology |
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53 / 90 page ![]() Datasheet Aug 2009 53 Order Number:320003-08 P33-65nm . Notes: 1. WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either during or one data cycle before valid data. 2. This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by CE# deassertion after the first word in the burst. Notes: 1. WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either during or one data cycle before valid data. 2. At the end of Word Line; the delay incurred when a burst access crosses a 16-word boundary and the starting address is not 4-word boundary aligned. See Section 11.1.3, “End of Word Line (EOWL) Considerations” on page 37 for more information Figure 20: Synchronous Single-Word Array or Non-array Read Timing Figure 21: Continuous Burst Read, showing an Output Delay Timing R312 R305 R304 R4 R17 R307 R15 R9 R7 R8 R303 R102 R3 R104 R106 R101 R104 R105 R105 R2 R306 R301 CLK [C] Address [A] ADV# [V] CE# [E] OE# [G] WAIT [T] Data [D/Q] R305 R305 R305 R305 R304 R4 R7 R312 R307 R15 R303 R102 R3 R106 R105 R105 R101 R2 R304 R304 R304 R306 R302 R301 CLK [C] Address [A] ADV# [V] CE# [E] OE# [G] WAIT [T] Data [D/Q] |
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