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JS28F256P33BFE 数据表(PDF) 64 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 64 Page - Micron Technology

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P33-65nm
Datasheet
Aug 2009
64
Order Number: 320003-08
A.1.4
Device Geometry Definition
Table 33: Device Geometry Definition
Offset
Length
Description
Add
Hex
Code
Value
27h
1
“n” such that device size = 2n in number of bytes
27:
See Table Below
28h
2
Flash device interface code assignment:
"n" such that n+1 specifies the bit field that represents the flash device width
capabilities as described in the table:
765
432
10
_
_
_
_
x64
x32
x16
x8
28:
--01
x16
15
14
13
12
11
10
9
8
___
___
__
29:
--00
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
2A:
--0A
1024
2B:
--00
2Ch
1
Number of erase block regions (x) within device:
1. x = 0 means no erase blocking; the device erases in bulk
2. x specifies the number of device regions with one or more contiguous
same-size erase blocks.
3. Symmetrically blocked partitions have one blocking region
2C:
See Table Below
2D
4
Erase Block Region 1 Information
bits 0-15 = y, y+1 = number of identical-size erase blocks
bits 16-31 = z, region erase block(s) size are z x 256 bytes
2D:
See Table Below
2E:
2F:
30:
31h
4
Erase Block Region 2 Information
bits 0-15 = y, y+1 = number of identical-size erase blocks
bits 16-31 = z, region erase block(s) size are z x 256 bytes
31:
See Table Below
32:
33:
34:
35h
4
Reserved for future erase block region information
35:
See Table Below
36:
37:
38:
Address
256-Mbit
Address
256-Mbit
Address
256-Mbit
-B
-T
-B
-T
-B
-T
27:
--19
--19
2D:
--03
--FE
33:
--00
--80
28:
--01
--01
2E:
--00
--00
34:
--02
--00
29:
--00
--00
2F:
--80
--00
35:
--00
--00
2A:
--0A
--0A
30:
--00
--02
36:
--00
--00
2B:
--00
--00
31:
--FE
--03
37:
--00
--00
2C:
--02
--02
32:
--00
--00
38:
--00
--00



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