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JS28F256P33BFE 数据表(PDF) 27 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 27 Page - Micron Technology

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Datasheet
Aug 2009
27
Order Number:320003-08
P33-65nm
To read data from the device, the Read Array command must be issued. Read Array,
Read Status Register, Read Device Identifier, Read CFI, and Program Resume are valid
commands during a program suspend.
During a program suspend, deasserting CE# places the device in standby, reducing
active current. VPP must remain at its programming level, and WP# must remain
unchanged while in program suspend. If RST# is asserted, the device is reset.
8.5
Program Resume
The Resume command instructs the device to continue programming, and
automatically clears Status Register bits SR[7,2]. This command can be written to any
address. If error bits are set, the Status Register should be cleared before issuing the
next instruction. RST# must remain deasserted (see Figure 32, “Program Suspend/
Resume Flowchart” on page 73).
8.6
Program Protection
When VPP = VIL, absolute hardware write protection is provided for all device blocks. If
VPP is at or below VPPLK, programming operations halt and SR.3 is set indicating a VPP-
level error. Block lock registers are not affected by the voltage level on VPP; they may
still be programmed and read, even if VPP is less than VPPLK.
Figure 7: Example VPP Supply Connections
• Factory Programming with
V
PP = VPPH
• Complete write/Erase Protection when
V
PP ≤ VPPLK
VCC
VPP
VCC
VPP
• Low Voltage and Factory Programming
• Low-voltage Programming only
• Logic Control of Device Protection
VCC
VPP
• Low Voltage Programming Only
• Full Device Protection Unavailable
VCC
VPP
≤ 10K Ω
V
PP
V
CC
V
CC
PROT #
V
CC
V
PP=VPPH
V
CC



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