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JS28F256P33BFE 数据表(PDF) 49 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 49 Page - Micron Technology

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Datasheet
Aug 2009
49
Order Number:320003-08
P33-65nm
15.2
Capacitance
15.3
AC Read Specifications
Table 22: Capacitance
Symbol
Parameter
Signals
Min
Typ
Max
Unit
Condition
Note
CIN
Input Capacitance
Address, Data,
CE#, WE#, OE#,
RST#, CLK,
ADV#, WP#
26
7
pF
Typ temp = 25 °C,
Max temp = 85 °C,
VCC = (0 V - 3.6 V),
VCCQ = (0 V - 3.6 V),
Discrete silicon die
1,2,3
COUT
Output Capacitance
Data, WAIT
2
4
5
pF
Notes:
1.
Capacitance values are for a single die; for dual die, the capacitance values are doubled.
2.
Sampled, not 100% tested.
3.
Silicon die capacitance only, add 1 pF for discrete packages.
Table 23: AC Read Specifications - (Sheet 1 of 3)
Num
Symbol
Parameter
Min
Max
Unit
Notes
Asynchronous Specifications
R1
tAVAV
Read cycle time
Easy BGA
95
-
ns
-
TSOP
105
ns
-
R2
tAVQV
Address to output valid
Easy BGA
-
95
ns
-
TSOP
105
ns
-
R3
tELQV
CE# low to output valid
Easy BGA
-
95
ns
-
TSOP
105
ns
-
R4
tGLQV
OE# low to output valid
-
25
ns
1,2
R5
tPHQV
RST# high to output valid
-
150
ns
1
R6
tELQX
CE# low to output in low-Z
0
-
ns
1,3
R7
tGLQX
OE# low to output in low-Z
0
-
ns
1,2,3
R8
tEHQZ
CE# high to output in high-Z
-
20
ns
1,3
R9
tGHQZ
OE# high to output in high-Z
-
15
ns
R10
tOH
Output hold from first occurring address, CE#, or OE#
change
0-
ns
R11
tEHEL
CE# pulse width high
17
-
ns
1
R12
tELTV
CE# low to WAIT valid
-
17
ns
R13
tEHTZ
CE# high to WAIT high-Z
-
20
ns
1,3
R15
tGLTV
OE# low to WAIT valid
-
17
ns
1
R16
tGLTX
OE# low to WAIT in low-Z
0
-
ns
1,3
R17
tGHTZ
OE# high to WAIT in high-Z
-
20
ns
Latching Specifications



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