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JS28F256P33BFE 数据表(PDF) 58 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 58 Page - Micron Technology

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P33-65nm
Datasheet
Aug 2009
58
Order Number: 320003-08
15.5
Program and Erase Characteristics
Table 25: Program and Erase Specifications
Num
Symbol
Parameter
VPPL
VPPH
Unit
Note
Min
Typ
Max
Min
Typ
Max
Conventional Word Programming
W200
tPROG/W
Program
Time
Single word
-
150
456
-
150
456
µs
1
Buffered Programming
W250
tPROG
Program
Time
Aligned 32-Wd, BP time
(32 Words)
-
176
716
-
176
716
µs
1
Aligned 64-Wd, BP time
(64 Word)
-
216
900
-
216
900
Aligned 128-Wd, BP time
(128 Words)
-
272
1140
-
272
1140
Aligned 256-Wd, BP time
(256 Words)
-
396
1690
-
396
1690
one full buffer (512
Words)
-
700
3016
-
700
3016
Buffered Enhanced Factory Programming
W451
tBEFP/B
Program
Single byte
n/a
n/a
n/a
-
0.5
-
µs
1,2
W452
tBEFP/Setup
BEFP Setup
n/a
n/a
n/a
5
-
-
1
Erase and Suspend
W500
tERS/PB
Erase Time
32-KByte Parameter
-
0.8
4.0
-
0.8
4.0
s
1
W501
tERS/MB
128-KByte Main
-
0.8
4.0
-
0.8
4.0
W600
tSUSP/P
Suspend
Latency
Program suspend
-
20
25
-
20
25
µs
W601
tSUSP/E
Erase suspend
-
20
25
-
20
25
W602
tERS/SUSP
Erase to Suspend
-
500
-
-
500
-
1,3
blank check
W702
tBC/MB
blank check
Main Array Block
-
3.2
-
-
3.2
-
ms
Notes:
1.
Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are valid for all speed versions.
Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
3.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.



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