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JS28F256P33BFE 数据表(PDF) 55 Page - Micron Technology |
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JS28F256P33BFE 数据表(HTML) 55 Page - Micron Technology |
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55 / 90 page ![]() Datasheet Aug 2009 55 Order Number:320003-08 P33-65nm Write to Synchronous Read Specifications W19 tWHCH/L WE# high to Clock valid 19 - ns 1,2,3,6,10 W20 tWHVH WE# high to ADV# high 19 - ns W28 tWHVL WE# high to ADV# low 7 - ns Write Specifications with Clock Active W21 tVHWL ADV# high to WE# low - 20 ns 1,2,3,11 W22 tCHWL Clock high to WE# low - 20 ns Notes: 1. Write timing characteristics during erase suspend are the same as write-only operations. 2. A write operation can be terminated with either CE# or WE#. 3. Sampled, not 100% tested. 4. Write pulse width low (tWLWH or tELEH) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high (whichever occurs first). Hence, tWLWH = tELEH = tWLEH = tELWH. 5. Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever occurs first) to CE# or WE# low (whichever occurs last). Hence, tWHWL = tEHEL = tWHEL = tEHWL). 6. tWHVH or tWHCH/L must be met when transiting from a write cycle to a synchronous burst read. 7. VPP and WP# should be at a valid level until erase or program success is determined. 8. This specification is only applicable when transiting from a write cycle to an asynchronous read. See spec W19 and W20 for synchronous read. 9. When doing a Read Status operation following any command that alters the Status Register, W14 is 20 ns. 10. Add 10 ns if the write operations results in a RCR or block lock status change, for the subsequent read operation to reflect this change. 11. These specs are required only when the device is in a synchronous mode and clock is active during address setup phase. Figure 23: Write-to-Write Timing Table 24: AC Write Specifications (Sheet 2 of 2) Num Symbol Parameter Min Max Unit Notes W1 W7 W4 W7 W4 W3 W9 W3 W9 W3 W3 W6 W2 W6 W2 W8 W8 W5 W5 Address [A] CE# [E} WE# [W] OE# [G] Data [D/Q] RST# [P] |
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