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JS28F256P33BFE 数据表(PDF) 13 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 13 Page - Micron Technology

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Datasheet
Aug 2009
13
Order Number:320003-08
P33-65nm
4.0
Signals
Table 4:
TSOP and Easy BGA Signal Descriptions (Sheet 1 of 2)
Symbol
Type
Name and Function
A[MAX:1]
Input
ADDRESS INPUTS: Device address inputs. 256-Mbit: A[24:1]; 512-Mbit: A[25:1]. Note: The
virtual selection of the 256-Mbit “Top parameter” die in the dual-die 512-Mbit configuration is
accomplished by setting A[25] high (VIH).
DQ[15:0]
Input/
Output
DATA INPUT/OUTPUTS: Inputs data and commands during write cycles; outputs data during
reads of memory, status register, OTP register, and read configuration register. Data balls float when
the CE# or OE# are deasserted. Data is internally latched during writes.
ADV#
Input
ADDRESS VALID: Active low input. During synchronous read operations, addresses are latched on
the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.
In asynchronous mode, the address is latched when ADV# going high or continuously flows through
if ADV# is held low.
WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.
CE#
Input
CHIP ENABLE: Active low input. CE# low selects the associated flash memory die. When asserted,
flash internal control logic, input buffers, decoders, and sense amplifiers are active. When
deasserted, the associated flash die is deselected, power is reduced to standby levels, data and
WAIT outputs are placed in high-Z state.
WARNING: All chip enables must be high when device is not in use.
CLK
Input
CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode.
During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the
next valid CLK edge with ADV# low, whichever occurs first.
WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.
OE#
Input
OUTPUT ENABLE: Active low input. OE# low enables the device’s output data buffers during read
cycles. OE# high places the data outputs and WAIT in High-Z.
RST#
Input
RESET: Active low input. RST# resets internal automation and inhibits write operations. This
provides data protection during power transitions. RST# high enables normal operation. Exit from
reset places the device in asynchronous read array mode.
WAIT
Output
WAIT: Indicates data valid in synchronous array or non-array burst reads. RCR[10], (WT)
determines its polarity when asserted. WAIT’s active output is VOL or VOH when CE# and OE# are
VIL. WAIT is high-Z if CE# or OE# is VIH.
• In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
valid data when deasserted.
• In asynchronous page mode, and all write modes, WAIT is deasserted.
WE#
Input
WRITE ENABLE: Active low input. WE# controls writes to the device. Address and data are latched
on the rising edge of WE#.
WP#
Input
WRITE PROTECT: Active low input. WP# low enables the lock-down mechanism. Blocks in lock-
down cannot be unlocked with the Unlock command. WP# high overrides the lock-down function
enabling blocks to be erased or programmed using software commands.
VPP
Power/
Input
ERASE AND PROGRAM POWER: A valid voltage on this pin allows erasing or programming.
Memory contents cannot be altered when VPP ≤ VPPLK. Block erase and program at invalid VPP
voltages should not be attempted.
Set VPP = VPPL for in-system program and erase operations. To accommodate resistor or diode drops
from the system supply, the VIH level of VPP can be as low as VPPL min. VPP must remain above VPPL
min to perform in-system flash modification. VPP may be 0 V during read operations.
VPPH can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500
cycles. VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of
this pin at 9 V may reduce block cycling capability.
VCC
Power
DEVICE CORE POWER SUPPLY: Core (logic) source voltage. Writes to the flash array are inhibited
when VCC ≤ VLKO. Operations at invalid VCC voltages should not be attempted.
VCCQ
Power
OUTPUT POWER SUPPLY: Output-driver source voltage.
VSS
Power
GROUND: Connect to system ground. Do not float any VSS connection.



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