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JS28F256P33BFE 数据表(PDF) 35 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 35 Page - Micron Technology

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Datasheet
Aug 2009
35
Order Number:320003-08
P33-65nm
11.1.1
Read Mode
The Read Mode (RM) bit selects synchronous burst-mode or asynchronous page-mode
operation for the device. When the RM bit is set, asynchronous page mode is selected
(default). When RM is cleared, synchronous burst mode is selected.
11.1.2
Latency Count
The Latency Count (LC) bits tell the device how many clock cycles must elapse from the
rising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until the
first valid data word is driven onto DQ[15:0]. The input clock frequency is used to
determine this value and Figure 9 shows the data output latency for the different
settings of LC. The maximum Latency Count for P33 would be Code 4 based on the Max
clock frequency specification of 52 MHz, and there will be zero WAIT States when
bursting within the word line. Please also refer to Section 11.1.3, “End of Word Line
(EOWL) Considerations” on page 37 for more information on EOWL.
Refer to Table 12, “LC and Frequency Support” on page 36 for Latency Code Settings.
3
Burst Wrap (BW)
0 =Wrap; Burst accesses wrap within burst length set by BL[2:0]
1 =No Wrap; Burst accesses do not wrap within burst length (default)
2:0
Burst Length (BL[2:0])
001 =4-word burst
010 =8-word burst
011 =16-word burst
111 =Continuous-word burst (default)
(Other bit settings are reserved)
Table 11: Read Configuration Register Description (Sheet 2 of 2)



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