JS28F256P33BFE datasheet(60/90 Pages) MICRON

部件名	JS28F256P33BFE

功能描述	NumonyxTM StrataFlash Embedded Memory

PDF	90 Pages

Scroll/Zoom	100%

制造商	MICRON [Micron Technology]

网页	http://www.micron.com

标志

60 / 90 page

P33-65nm

Datasheet

Aug 2009

Order Number: 320003-08

16.2

SCSP Products

Note:

The “B” parameter is used for Top(Die1)/Bot(Die2) stack option in the 512-Mbit density.

Figure 29: Decoder for SCSP Devices

Product Designator

48F = Numonyx™ Flash Memory Only

Package Designator

RC = 64- Ball Easy BGA, leaded

PC = 64- Ball Easy BGA, lead- free

Device Density

0 = No die

4 = 256-Mbit

Product Family

P = Numonyx™ StrataFlash

® Embedded Memory (P33)

0 = No die

Device Details

E = 65nm lithography

Parameter Location

B = Bottom Parameter

T = Top Parameter

F 4 4

P 0

B 0

C 4

Ballout Descriptor

0 = Discrete ballout

I/ O Voltage, CE # Configuration

X = Individual Chip Enable (s)

T = Virtual Chip Enable(s)

VCC = 2. 3 to 3.6 V

VCCQ = 2. 3to 3. 6 V

Table 27: Valid Combinations for Dual- Die Products

512-Mbit*

RC48F4400P0TB0E

PC48F4400P0TB0E

JS28F256P33BFE 数据表(PDF) 60 Page - Micron Technology

JS28F256P33BFE 数据表(HTML) 60 Page - Micron Technology

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