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JS28F256P33BFE 数据表(PDF) 1 Page - Micron Technology |
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JS28F256P33BFE 数据表(HTML) 1 Page - Micron Technology |
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1 / 90 page ![]() Datasheet Aug 2009 1 Order Number: 320003-08 NumonyxTM StrataFlash® Embedded Memory (P33-65nm) 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero wait states, 17ns clock-to- data output synchronous-burst read mode — 4-, 8-, 16-, and continuous-word options for burst mode — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer — 3.0V buffered programming at 1.5MByte/s (Typ) using 512-word buffer Architecture: — Multi-Level Cell Technology: Highest Density at Lowest Cost — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration —128-KByte main blocks — Blank Check to verify an erase block Voltage and Power: —VCC (core) voltage: 2.3 V – 3.6 V —VCCQ (I/O) voltage: 2.3 V – 3.6 V — Standby current: 65uA (Typ) for 256-Mbit — Continuous synchronous read current: 21 mA (Typ)/24 mA (Max) at 52 MHz Security: — One-Time Programmable Registers: — 64 unique factory device identifier bits — 2112 user-programmable OTP bits — Absolute write protection: VPP = VSS — Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down capability — Password Access feature Software: — 20µs (Typ) program suspend — 20µs (Typ) erase suspend — Numonyx™ Flash Data Integrator optimized — Basic Command Set and Extended Function Interface Command Set compatible — Common Flash Interface capable Density and Packaging — 56-Lead TSOP package (256-Mbit only) — 64-Ball Easy BGA package (256, 512-Mbit) — 16-bit wide data bus Quality and Reliability — Operating temperature: –40 °C to +85 °C — Minimum 100,000 erase cycles per block — 65nm ETOX™ X process technology |
类似零件编号 - JS28F256P33BFE |
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类似说明 - JS28F256P33BFE |
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