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JS28F256P33BFE 数据表(PDF) 54 Page - Micron Technology

部件名 JS28F256P33BFE
功能描述  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

JS28F256P33BFE 数据表(HTML) 54 Page - Micron Technology

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P33-65nm
Datasheet
Aug 2009
54
Order Number: 320003-08
Note:
WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during initial latency and
deasserted during valid data (RCR.10=0, WAIT asserted low).
15.4
AC Write Specifications
Figure 22: Synchronous Burst-Mode Four-Word Read Timing
Table 24: AC Write Specifications (Sheet 1 of 2)
Num
Symbol
Parameter
Min
Max
Unit
Notes
W1
tPHWL
RST# high recovery to WE# low
150
-
ns
1,2,3
W2
tELWL
CE# setup to WE# low
0
-
ns
1,2,3
W3
tWLWH
WE# write pulse width low
50
-
ns
1,2,4
W4
tDVWH
Data setup to WE# high
50
-
ns
1,2
W5
tAVWH
Address setup to WE# high
50
-
ns
W6
tWHEH
CE# hold from WE# high
0
-
ns
W7
tWHDX
Data hold from WE# high
0
-
ns
W8
tWHAX
Address hold from WE# high
0
-
ns
W9
tWHWL
WE# pulse width high
20
-
ns
1,2,5
W10
tVPWH
VPP setup to WE# high
200
-
ns
1,2,3,7
W11
tQVVL
VPP hold from Status read
0
-
ns
W12
tQVBL
WP# hold from Status read
0
-
ns
1,2,3,7
W13
tBHWH
WP# setup to WE# high
200
-
ns
W14
tWHGL
WE# high to OE# low
0
-
ns
1,2,9
W16
tWHQV
WE# high to read valid
tAVQV + 35
-
ns
1,2,3,6,10
Write to Asynchronous Read Specifications
W18
tWHAV
WE# high to Address valid
0
-
ns
1,2,3,6,8
y
A
Q0
Q1
Q2
Q3
R307
R10
R304
R305
R304
R4
R7
R17
R15
R9
R8
R303
R3
R106
R102
R105
R105
R101
R2
R306
R302
R301
CLK [C]
Address [A]
ADV# [V]
CE# [E]
OE# [G]
WAIT [T]
Data [D/Q]



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