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EDBA164B4PR-1DITF-R 数据表(PDF) 109 Page - Micron Technology

部件名 EDBA164B4PR-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DITF-R 数据表(HTML) 109 Page - Micron Technology

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The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and
VIL(DC) are dependent on VREF.
VREF DC variations affect the absolute voltage a signal must reach to achieve a valid
HIGH or LOW, as well as the time from which setup and hold times are measured. When
VREF is outside the specified levels, devices will function correctly with appropriate tim-
ing deratings as long as:
•VREF is maintained between 0.44 x VDDQ (or VDD2) and 0.56 x VDDQ (or VDD2), and
• the controller achieves the required single-ended AC and DC input levels from instan-
taneous VREF (see the Single-Ended AC and DC Input Levels for CA and CS_n Inputs
table).
System timing and voltage budgets must account for VREF deviations outside this range.
The setup/hold specification and derating values must include time and voltage associ-
ated with VREF AC noise. Timing and voltage effects due to AC noise on VREF up to the
specified limit (±1% VDD) are included in LPDDR2 timings and their associated derat-
ings.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
AC and DC Logic Input Measurement Levels for Single-Ended
Signals
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
109
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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