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PSD834210MIT 数据表(PDF) 77 Page - STMicroelectronics |
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PSD834210MIT 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 89 page  77/89 PSD834F2V Figure 42. Write Timing Table 49. Program, Write and Erase Times Note: 1. Programmed to all zero before erase. 2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading. Symbol Parameter Min. Typ. Max. Unit Flash Program 8.5 s Flash Bulk Erase1 (pre-programmed) 330 s Flash Bulk Erase (not pre-programmed) 5 s tWHQV3 Sector Erase (pre-programmed) 1 30 s tWHQV2 Sector Erase (not pre-programmed) 2.2 s tWHQV1 Byte Program 14 1200 µs Program / Erase Cycles (per Sector) 100,000 cycles tWHWLO Sector Erase Time-Out 100 µs tQ7VQV DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)2 30 ns tAVLX t LXAX t LVLX tAVWL tSLWL t WHDX t WHAX t ELTL t EHEL t WLMV t WLWH tDVWH tTHEH tAVPV ADDRESS VALID ADDRESS VALID DATA VALID DATA VALID ADDRESS OUT t WHPV STANDARD MCU I/O OUT ALE/AS A/D MULTIPLEXED BUS ADDRESS NON-MULTIPLEXED BUS DATA NON-MULTIPLEXED BUS CSI WR (DS) E R/ W AI02896 |
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