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EM357-RTR 数据表(PDF) 8 Page - Silicon Laboratories

部件名 EM357-RTR
功能描述  High-Performance, Integrated ZigBee/802.15.4 System-on-Chip
PDF  241 Pages
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制造商  SILABS [Silicon Laboratories]
网页  http://www.silabs.com
标志 SILABS - Silicon Laboratories

EM357-RTR 数据表(HTML) 8 Page - Silicon Laboratories

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Rev 1.3
8
2. Electrical Specifications
2.1. Absolute Maximum Ratings
Table 2.1 lists the absolute maximum ratings for the EM35x.
2.2. Recommended Operating Conditions
Table 2.2 lists the rated operating conditions of the EM35x.
Table 2.1. Absolute Maximum Ratings
Parameter
Test Condition
Min
Max
Unit
Regulator input voltage (VDD_PADS)
–0.3
+3.6
V
Analog, Memory and Core voltage (VDD_24MHZ,
VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA,
VDD_MEM, VDD_PRE, VDD_SYNTH, VDD_CORE)
–0.3
+2.0
V
Voltage on RF_P,N; RF_TX_ALT_P,N
–0.3
+3.6
V
RF Input Power
(for max level for correct packet reception see
Table 2.7)
RX signal into a lossless
balun
+15
dBm
Voltage on any GPIO (PA[7:0], PB[7:0], PC[7:0]),
SWCLK, nRESET, VREG_OUT
–0.3
VDD_PAD
S +0.3
V
Voltage on any GPIO pin (PA4, PA5, PB5, PB6, PB7,
PC1), when used as an input to the general purpose
ADC
–0.3
2.0
V
Voltage on OSCA, OSCB, NC
–0.3
VDD_PAD
SA +0.3
V
Storage temperature
–40
+140
°C
Note:
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Table 2.2. Operating Conditions
Parameter
Test Condition
Min
Typ
Max
Unit
Regulator input voltage (VDD_PADS)
2.1
3.6
V
Analog and memory input voltage
(VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF,
VDD_PADSA, VDD_MEM, VDD_PRE,
VDD_SYNTH)
1.7
1.8
1.9
V
Core input voltage when supplied from internal
regulator (VDD_CORE)
1.18
1.25
1.32
V
Core input voltage when supplied externally
(VDD_CORE)
1.18
1.9
V
Operating temperature range, TA
–40
+85
°C
Note:
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.



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