EM357-RTR datasheet(9/241 Pages) SILABS

9 / 241 page

Rev 1.3

2.3. Environmental Characteristics

Table 2.3 lists the rated environmental characteristics of the EM35x.

2.4. DC Electrical Characteristics

Table 2.4 lists the dc electrical characteristics of the EM35x.

Table 2.3. Environmental Characteristics

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

ESD (human body model)

On any pin

—

±2

ESD (charged device model)

Non-RF pins

—

±400

ESD (charged device model)

RF pins

—

±225

Package Thermal Resistance*

JA

27.1

°C/W

*Note:

Thermal resistance assumes multi-layer PCB with exposed pad soldered to a PCB board.

Table 2.4. DC Characteristics

Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.

Parameter

Test Condition

Min

Typ

Max

Unit

Regulator input voltage

(VDD_PADS)

2.1

—

3.6

Power supply range (VDD_MEM)

Regulator output or external input

1.7

1.8

1.9

Power supply range (VDD_CORE)

Regulator output

1.18

1.25

1.32

Deep Sleep Current

Quiescent current, internal RC

oscillator disabled

–40 °C, VDD_PADS=3.6 V

—

0.4

—

A

+25 °C, VDD_PADS=3.6 V

—

0.4

—

A

+85 °C, VDD_PADS=3.6 V

—

0.7

—

A

Quiescent current, including



internal RC oscillator

–40 °C, VDD_PADS=3.6 V

—

0.7

—

A

+25 °C, VDD_PADS=3.6 V

—

0.7

—

A

+85°C, VDD_PADS=3.6 V

—

1.1

—

A

Quiescent current, including

32.768 kHz oscillator

–40 °C, VDD_PADS=3.6 V

—

0.8

—

A

+25 °C, VDD_PADS=3.6 V

—

1.0

—

A

+85 °C, VDD_PADS=3.6 V

—

1.5

—

A

Quiescent current, including



internal RC oscillator and

32.768 kHz oscillator

–40 °C, VDD_PADS=3.6 V

—

1.1

—

A

+25 °C, VDD_PADS=3.6 V

—

1.3

—

A

+85 °C, VDD_PADS=3.6 V

—

1.8

—

A

Simulated deep sleep (debug

mode) current

With no debugger activity

—

300

—

A

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