EM357-RTR datasheet(10/241 Pages) SILABS

10 / 241 page

Rev 1.3

Reset Current

Quiescent current, nRESET

asserted

Typ at 25 °C/3.0 V

Max at 85 °C/3.6 V

—

1.2

2.0

Processor and Peripheral Currents

ARM® CortexTM-M3, RAM, and

flash memory

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 running at 12 MHz

from crystal oscillator

Radio and all peripherals off

—

6.5

—

ARM® CortexTM-M3, RAM, and

flash memory

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 running at 24 MHz

from crystal oscillator

Radio and all peripherals off

—

7.5

—

ARM® CortexTM-M3, RAM, and

flash memory sleep current

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 sleeping, CPU

clock set to 12 MHz from the crystal

oscillator

Radio and all peripherals off

—

3.0

—

ARM® CortexTM-M3, RAM, and

flash memory sleep current

25 °C, 1.8 V memory and

1.25 V core

ARM® CortexTM-M3 sleeping, CPU

clock set to 6 MHz from the high fre-

quency RC oscillator

Radio and all peripherals off

—

2.0

—

Serial controller current

For each controller at maximum data

rate

—

0.2

—

General purpose timer current

For each timer at maximum clock rate

—

0.25

—

General purpose ADC current

At maximum sample rate, DMA enabled

—

1.1

—

RX Current

Radio receiver, MAC, and base-

band

ARM® CortexTM-M3 sleeping, CPU

clock set to 12 MHz

—

22.0

—

Total RX current ( = IRadio receiver,

MAC and baseband, CPU + IRAM,

and Flash memory )

25 °C, VDD_PADS=3.0 V

ARM® CortexTM-M3 running at 12 MHz

—

25.5

—

25 °C, VDD_PADS=3.0 V

ARM® CortexTM-M3 running at 24 MHz

—

26.5

—

Boost mode total RX current ( =

IRadio receiver, MAC and base-

band, CPU+ IRAM, and flash

memory )

25 °C, VDD_PADS=3.0 V

ARM® CortexTM-M3 running at 12 MHz

—

27.5

—

25 °C, VDD_PADS=3.0 V

ARM® CortexTM-M3 running at 24 MHz

—

28.5

—

Table 2.4. DC Characteristics (Continued)

Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.

Parameter

Test Condition

Min

Typ

Max

Unit

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