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EM357-RTR 数据表(PDF) 15 Page - Silicon Laboratories

部件名 EM357-RTR
功能描述  High-Performance, Integrated ZigBee/802.15.4 System-on-Chip
PDF  241 Pages
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制造商  SILABS [Silicon Laboratories]
网页  http://www.silabs.com
标志 SILABS - Silicon Laboratories

EM357-RTR 数据表(HTML) 15 Page - Silicon Laboratories

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15
Rev 1.3
Table 2.6 lists the nRESET pin specifications for the EM35x. The digital I/O power (named VDD_PADS) comes
from three dedicated pins (pins 23, 28 and 37). The voltage applied to these pins sets the I/O voltage.
2.6. Non-RF System Electrical Characteristics
Table 2.7 lists the non-RF system level characteristics for the EM35x.
Table 2.6. nReset Pin Specifications
Parameter
Test Condition
Min
Typ
Max
Unit
Low Schmitt switching threshold
VSWIL
Schmitt input threshold going from
high to low
0.42 x
VDD_PADS
0.50 x
VDD_PADS
V
High Schmitt switching threshold
VSWIH
Schmitt input threshold going from
low to high
0.62 x
VDD_PADS
0.80 x
VDD_PADS
V
Input current for logic 0
IIL
–0.5
μA
Input current for logic 1
IIH
+0.5
μA
Input pull-up resistor value
RIPU
Pull-up value while the chip is not
reset
24
29
34
k
Input pull-up resistor value
RIPURESET
Pull-up value while the chip is
reset
12
14.5
17
k
Table 2.7. Non-RF System Electrical Characteristics
Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.
Parameter
Test Condition
Min
Typ
Max
Unit
System wake time from deep
sleep
From wakeup event to first ARM® Cor-
texTM-M3 instruction running from 6 MHz
internal RC clock
Includes supply ramp time and oscillator
startup time
110
µs
Shutdown time going into deep
sleep
From last ARM® CortexTM-M3 instruction
to deep sleep mode
5
µs



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