DRV8317 datasheet(8/69 Pages) TI

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TJ = –40°C to +150°C, VVM = 4.5 to 20 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 12 V

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VL2

Input mode 2 voltage

47 kΩ ± 5% tied to AGND

0.27*AV

0.4*AVD

0.545*AV

VL3

Input mode 3 voltage

Hi-Z

0.606*AV

0.757*AV

0.909*AV

VL4

Input mode 4 voltage

Tied to AVDD

0.94*AV

AVDD

RPU

Input pullup resistance

To AVDD

kΩ

RPD

Input pulldown resistance

To AGND

160

kΩ

DRIVER OUTPUTS

RDS(ON)

Total MOSFET on resistance (High-side

+ Low-side)

VVM ≥ 6 V, IOUT = 1 A, TJ

= 25°C, includes bond wire and

metallization resistance

130

157

mΩ

VVM ≥ 6 V, IOUT = 1 A, TJ = 125°C,

across process, includes bond wire and

metallization resistance

180

221.5

mΩ

RDS(ON)

Total MOSFET on resistance (High-side

+ Low-side)

4.5 V ≤ VVM < 6 V, IOUT = 1 A, TJ = 25°C,

includes bond wire and metallization

resistance

155

210

mΩ

4.5 V ≤ VVM < 6 V, IOUT = 1 A, TJ

= 125°C,across process, includes bond

wire and metallization resistance

225

290

mΩ

SR_RISE

Phase pin slew rate switching low to high

(Rising from 20 % to 80 % of VM)

VVM = 12V, SLEW_RATE = 00b (SPI

Variant) or SLEW pin tied to AGND (HW

Variant)

13.75

36.25

V/µs

VVM = 12V, SLEW_RATE = 01b (SPI

Variant) or SLEW pin to 47 kΩ +/- 5%

tied to AGND (HW Variant)

27.5

72.5

V/µs

VVM = 12V, SLEW_RATE = 10b (SPI

Variant) or SLEW pin to Hi-Z (HW

Variant)

62.5

125

187.5

V/µs

VVM = 12V, SLEW_RATE = 11b (SPI

Variant) or SLEW pin tied to AVDD (HW

Variant)

200

320

V/µs

SR_FALL

Phase pin slew rate switching high to low

(Falling from 80 % to 20 % of VM)

VVM = 12V, SLEW_RATE = 00b (SPI

Variant) or SLEW pin tied to AGND (HW

Variant)

13.75

V/µs

VVM = 12V, SLEW_RATE = 01b (SPI

Variant) or SLEW pin to 47 kΩ +/- 5%

tied to AGND (HW Variant)

27.5

72.5

V/µs

VVM = 12V, SLEW_RATE = 10b (SPI

Variant) or SLEW pin to Hi-Z (HW

Variant)

62.5

125

187.5

V/µs

VVM = 12V, SLEW_RATE = 11b (SPI

Variant) or SLEW pin tied to AVDD (HW

Variant)

200

320

V/µs

ILEAK

Leakage current OUTx

VVM = VOUTx = 20 V, Standby State

0.7

ILEAK

Leakage current OUTx

VOUTx = 0 V, Standby State

-50

-10

µA

DRV8317

SLVSGT3 – DECEMBER 2022

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