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DSP56303 数据表(PDF) 81 Page - Freescale Semiconductor, Inc |
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DSP56303 数据表(HTML) 81 Page - Freescale Semiconductor, Inc |
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81 / 292 page ![]() Bus Interface Unit (BIU) Registers DSP56303 User’s Manual, Rev. 2 Freescale Semiconductor 4-23 4.6.2 DRAM Control Register (DCR) The DRAM controller is an efficient interface to dynamic RAM devices in both random read/write cycles and Fast Access mode (Page mode). An internal DRAM controller controls the page hit circuit, the address multiplexing (row address and column address), the control signal generation (CAS and RAS) and the refresh access generation (CAS before RAS) for a variety of DRAM module sizes and access times. The internal DRAM controller configuration is determined by the DRAM Control Register (DCR). The DRAM Control Register (DCR) is a 24-bit read/write register that controls and configures the external DRAM accesses. The DCR bits are shown in Figure 4-7. Note: To prevent improper device operation, you must guarantee that all the DCR bits except BSTR are not changed during a DRAM access. 9–5 BA1W[4–0] 11111 (31 wait states) Bus Area 1 Wait State Control Defines the number of wait states (one through 31) inserted into each external SRAM access to Area 1 (DRAM accesses are not affected by these bits). Area 1 is the area defined by AAR1. Note: Do not program the value of these bits as zero, since SRAM memory access requires at least one wait state. When four through seven wait states are selected, one additional wait state is inserted at the end of the access. When selecting eight or more wait states, two additional wait states are inserted at the end of the access. These trailing wait states increase the data hold time and the memory release time and do not increase the memory access time. 4–0 BA0W 11111 (31 wait states) Bus Area 0 Wait State Control Defines the number of wait states (one through 31) inserted in each external SRAM access to Area 0 (DRAM accesses are not affected by these bits). Area 0 is the area defined by AAR0. Note: Do not program the value of these bits as zero, since SRAM memory access requires at least one wait state. When selecting four through seven wait states, one additional wait state is inserted at the end of the access. When selecting eight or more wait states, two additional wait states are inserted at the end of the access. These trailing wait states increase the data hold time and the memory release time and do not increase the memory access time. Table 4-8. Bus Control Register (BCR) Bit Definitions (Continued) Bit Number Bit Name Reset Value Description |
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