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MCIMX503CVM8B 数据表(PDF) 34 Page - Freescale Semiconductor, Inc |
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MCIMX503CVM8B 数据表(HTML) 34 Page - Freescale Semiconductor, Inc |
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34 / 134 page ![]() i.MX50 Applications Processors for Consumer Products, Rev. 2 34 Freescale Semiconductor Electrical Characteristics 4.3.5 Low Voltage I/O (LVIO) DC Parameters The parameters in Table 21 are guaranteed per the operating ranges in Table 11, unless otherwise noted. 1 Vin(dc) specifies the allowable dc excursion of each differential input. 2 Vid(dc) specifies the input differential voltage |Vtr-Vcp| required for switching, where Vtr is the “pure” input level and Vcp is the “complementary” input level. the minimum value is equal to Vih(dc) - Vil(dc). 3 Typ condition: typ model, 1.8 V, and 25 °C. Max condition: BCS model, 1.9 V, and 105 °C. Min condition: WCS model, 1.7 V, and -20 °C. Table 21. LVIO DC Electrical Characteristics DC Electrical Characteristics Symbol Test Conditions MIN Typ MAX Units High-level output voltage Voh Ioh=-1mA Ioh=spec’ed Drive OVDD-0.15 0.8*OVDD —— V Low-level output voltage Vol Iol=1mA Iol=specified Drive — — 0.15 0.2*OVDD V High-level output current I Ioh Voh=0.8*OVDD Low Drive Medium Drive High Drive Max Drive -2.1 -4.2 -6.3 -8.4 —— mA Low-level output current I Iol Vol=0.2*OVDD Low Drive Medium Drive High Drive Max Drive 2.1 4.2 6.3 8.4 —— mA High-Level DC input voltage 1 VIH — 0.7*OVDD — OVDD V Low-Level DC input voltage VIL — 0V — 0.3*OVDD V Input Hysteresis VHYS OVDD=1.875 OVDD=2.775 0.35 0.62 1.27 —V Schmitt trigger VT+ 2 VT+ — 0.5*OVDD — — V Schmitt trigger VT- VT- — — — 0.5*OVDD V Pull-up resistor (22 K Ω PU) Rpu Vi=OVDD/2 20 24 28 K Ω Pull-up resistor (47 K Ω PU) Rpu Vi=OVDD/2 43 51 59 K Ω Pull-up resistor (100 K Ω PU) Rpu Vi=OVDD/2 91 108 125 K Ω Pull-down resistor (100 K Ω PD) Rpd Vi=OVDD/2 91 108 126 K Ω Input current (no pull-up/down) IIN VI = 0 VI=OVDD —1.7 250 120 nA Input current (22 K Ω PU) IIN VI = 0 VI=OVDD —— 161 0.12 μA Input current (47 K Ω PU) IIN VI = 0 VI=OVDD —— 76 0.12 μA Input current (100 K Ω PU) IIN VI = 0 VI=OVDD —— 36 0.12 μA |
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