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MCIMX503CVM8B 数据表(PDF) 41 Page - Freescale Semiconductor, Inc |
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MCIMX503CVM8B 数据表(HTML) 41 Page - Freescale Semiconductor, Inc |
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41 / 134 page ![]() Electrical Characteristics i.MX50 Applications Processors for Consumer Products, Rev. 2 Freescale Semiconductor 41 4.5.2 GPIO I/O Fast AC Parameters Table 27 shows the AC parameters for GPIO fast I/O. Output Pad di/dt (High Drive) tdit 23 mA/ns Output Pad di/dt (Medium drive) tdit 15 mA/ns Output Pad di/dt (Low drive) tdit 7 mA/ns Input Transition Times2 trm 25 ns 1 tps is measured between VIL to VIH for rising edge and between VIH to VIL for falling edge. 2 Hysteresis mode is recommended for inputs with transition time greater than 25 ns. Table 27. GPIO I/O Fast AC Parameters Parameter Symbol Test Condition Min Typ Max Unit Output Pad Transition Times (Max Drive) tr, tf 15 pF 35 pF 1.45/1.24 2.76/2.54 ns Output Pad Transition Times (High Drive) tr, tf 15 pF 35 pF 1.81/1.59 3.57/3.33 ns Output Pad Transition Times (Medium Drive) tr, tf 15 pF 35 pF 2.54/2.29 5.25/5.01 ns Output Pad Transition Times (Low Drive) tr, tf 15 pF 35 pF 4.82/4.50 10.54/9.95 ns Output Pad Slew Rate (Max Drive)1 1 tps is measured between VIL to VIH for rising edge and between VIH to VIL for falling edge. tps 15 pF 35 pF 0.69/0.78 0.36/0.39 V/ns Output Pad Slew Rate (High Drive) tps 15 pF 35 pF 0.55/0.62 0.28/0.30 V/ns Output Pad Slew Rate (Medium Drive) tps 15 pF 35 pF 0.39/0.44 0.19/0.20 V/ns Output Pad Slew Rate (Low Drive) tps 15 pF 35 pF 0.21/0.22 0.09/0.1 V/ns Output pad di/dt (Max drive) tdit — — — 70 mA/ns Output pad di/dt (High drive) tdit — — — 53 mA/ns Output pad di/dt (Medium drive) tdit — — — 35 mA/ns Output pad di/dt (Low drive) tdit — — — 18 mA/ns Input transition times2 2 Hysteresis mode is recommended for inputs with transition time greater than 25 ns. trm — — — 25 ns Table 26. GPIO I/O Slow AC Parameters (continued) Parameter Symbol Test Condition Min Typ Max Unit |
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