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MCIMX503CVM8B 数据表(PDF) 36 Page - Freescale Semiconductor, Inc |
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MCIMX503CVM8B 数据表(HTML) 36 Page - Freescale Semiconductor, Inc |
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36 / 134 page  i.MX50 Applications Processors for Consumer Products, Rev. 2 36 Freescale Semiconductor Electrical Characteristics 4.4 Output Buffer Impedance Characteristics This section defines the I/O impedance parameters of the i.MX50 processor. Pull-up resistor (22 K Ω PU) Rpu Vi=OVDD/2 22 29 71 K Ω Pull-up resistor (47 K Ω PU) Rpu Vi=OVDD/2 43 59 148 K Ω Pull-up resistor (100 K Ω PU) Rpu Vi=OVDD/2 46 62 156 K Ω Pull-down resistor (100 K Ω PD) Rpd Vi=OVDD/2 53 77 256 K Ω Input current (no pull-up/down) IIN VI = 0 VI=OVDD — 2.8 470 50 nA Input current (22 K Ω PU) IIN VI = 0 VI=OVDD — — 153 0.05 μA Input current (47 K Ω PU) IIN VI = 0 VI=OVDD —— 77 0.05 μA Input current (100 K Ω PU) IIN VI = 0 VI=OVDD —— 73 0.05 μA Input current (100 K Ω PD) IIN VI = 0 VI=OVDD — — 0.47 63 μA High-level output current, high voltage mode Ioh_hv Vol=0.8*OVDD Low Drive Medium Drive High Drive -5.1 -10.2 -15.3 —— mA External pull-up / pull-down resistor required to overdrive internal keeper Rext — — — 2.5 K Ω 1 To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current DC level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s. VIL and VIH do not apply when hysteresis is enabled. 2 Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled. Table 22. HVIO DC Electrical Characteristics (continued) DC Electrical Characteristics Symbol Test Conditions MIN TYP MAX Units |
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