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GXM 数据表(PDF) 112 Page - National Semiconductor (TI) |
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GXM 数据表(HTML) 112 Page - National Semiconductor (TI) |
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112 / 244 page ![]() www.national.com 112 Revision 3.1 Integrated Functions (Continued) 4.3.5 Address Translation The memory controller supports two address translations depending on the method used to interleave pages. 4.3.5.1 High Order Interleaving High Order Interleaving (HOI) uses the most significant address bits to select which bank the page is located in. This has the effect of allowing any mixture of DIMM types. However, it spreads the pages over wide address ranges. For example, two 8 MB DIMMs contain a total of four com- ponent pages. Two pages are together in one DIMM sepa- rated from the other two pages by 8 MB. 4.3.5.2 Low Order Interleaving Low Order Interleaving (LOI) uses the least significant bits after the page bits to select which bank the page is located in. This requires that memory is a power of 2, that the number of banks is a power of 2, and that the page sizes are the same. In other words, the DIMMs have to be of the same type. However, LOI does give a good benefit by providing a moving page throughout memory. Using the same example as above, two banks would be on one DIMM andthe next twobanks wouldbeonthe second DIMM, but they would be linear in address space. For an eight bank system that has 1 KB address (8 KB data) pages, there would be an effective moving page of 64 KB of data. 4.3.5.3 Physical Address to DRAM Address Conversion Auto LOI is in effect whenever the two DIMMs have the same number of DIMM banks, component banks, module sizes and page sizes. Tables 4-17 and Table4-18onpage 113giveAutoLOI address conversion examples when two DIMMs of the same size are used in a system. Table 4-17 shows a one DIMM bank conversion example, while Table 4-18 shows a two DIMM bank example. Table 4-19 and Table 4-20 on page 114 give Non-Auto LOI address conversion examples when either one or two DIMMs of different sizes are used in a system. Table 4-19 shows a one DIMM bank address conversion example, while Table 4-20 shows a two DIMM bank example. The addresses are computed on a per DIMM basis. Since the DRAM interface is 64 bits wide, the lower three bits of the physical address get mapped onto the DQM[7:0] lines. Thus, the address conversion tables (Tables 4-17 through 4-20) show the physical address starting from A3. 10:0 GBADD Graphics Base Address: This field indicates the graphics memory base address, which is program- mable on 512 KB boundaries. This field corresponds to address bits [29:19]. Note that BC_DRAM_TOP must be set to a value lower than the Graphics Base Address. GX_BASE+8418h-841Bh MC_DR_ADD (R/W) Default Value = 00000000h 31:10 RSVD Reserved: Set to 0. 9:0 DRADD Dirty RAM Address: This field is the address index that is used to access the Dirty RAM with the MC_DR_ACC register. This field does not auto increment. GX_BASE+841Ch-841Fh MC_DR_ACC (R/W) Default Value = 0000000xh 31:2 RSVD Reserved: Set to 0. 1D Dirty Bit: This bit is read/write accessible. 0V Valid Bit: This bit is read/write accessible. Table 4-16. Memory Controller Registers (Continued) Bit Name Description |
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