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CY8CKIT-059 数据表(PDF) 117 Page - Infineon Technologies AG |
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CY8CKIT-059 数据表(HTML) 117 Page - Infineon Technologies AG |
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117 / 140 page  Document Number: 001-84932 Rev. *N Page 116 of 139 PSoC® 5LP: CY8C58LP Family Datasheet 11.7 Memory Specifications are valid for –40 °C ≤ TA ≤ 105 °C and TJ ≤ 120 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except where noted. 11.7.1 Flash 11.7.2 EEPROM Table 11-61. Flash DC Specifications Parameter Description Conditions Min Typ Max Units Erase and program voltage VDDD pin 1.71 – 5.5 V Table 11-62. Flash AC Specifications Parameter Description Conditions Min Typ Max Units TWRITE Row write time (erase + program) – 15 20 ms TERASE Row erase time – 10 13 ms Row program time – 5 7 ms TBULK Bulk erase time (256 KB) – – 140 ms Sector erase time (16 KB) – – 15 ms TPROG Total device programming time No overhead[80] – 5 7.5 seconds Flash data retention time, retention period measured from last erase cycle Ambient temp. TA ≤ 55 °C, 100 K erase/program cycles 20 – – years Ambient temp. TA ≤ 85 °C, 10 K erase/program cycles 10 – – Ambient temp. TA ≤ 105 °C, 10 K erase/program cycles, ≤ one year at TA ≥ 75 °C [80] 10 – – Table 11-63. EEPROM DC Specifications Parameter Description Conditions Min Typ Max Units Erase and program voltage 1.71 – 5.5 V Table 11-64. EEPROM AC Specifications Parameter Description Conditions Min Typ Max Units TWRITE Single row erase/write cycle time – 10 20 ms EEPROM data retention time, retention period measured from last erase cycle Ambient temp, TA ≤ 25 °C, 1M erase/program cycles 20 – – years Ambient temp, TA ≤ 55 °C, 100K erase/program cycles 20 – – Ambient temp. TA ≤ 85 °C, 10K erase/program cycles 10 – – Ambient temp. TA ≤ 105 °C, 10K erase/program cycles, ≤ one year at TA ≥75 °C 10 – – Note 80. See PSoC 5 Device Programming Specifications for a description of a low-overhead method of programming PSoC 5 flash. |
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