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CY8CKIT-059 数据表(PDF) 119 Page - Infineon Technologies AG |
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CY8CKIT-059 数据表(HTML) 119 Page - Infineon Technologies AG |
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119 / 140 page ![]() Document Number: 001-84932 Rev. *N Page 118 of 139 PSoC® 5LP: CY8C58LP Family Datasheet 11.7.5 External Memory Interface Figure 11-77. Asynchronous Write and Read Cycle Timing, No Wait States Tbus_clock Bus Clock EM_Addr EM_CE EM_WE EM_OE EM_Data Write Cycle Read Cycle Minimum of 4 bus clock cycles between successive EMIF accesses Trd_setup Trd_hold Twr_setup Table 11-69. Asynchronous Write and Read Timing Specifications[83] Parameter Description Conditions Min Typ Max Units Fbus_clock Bus clock frequency[84] –– 33 MHz Tbus_clock Bus clock period[85] 30.3 – – ns Twr_Setup Time from EM_data valid to rising edge of EM_WE and EM_CE Tbus_clock – 10 – – ns Trd_setup Time that EM_data must be valid before rising edge of EM_OE 5– – ns Trd_hold Time that EM_data must be valid after rising edge of EM_OE 5– – ns Notes 83. Based on device characterization (Not production tested). 84. EMIF signal timings are limited by GPIO frequency limitations. See “GPIO” section on page 76. 85. EMIF output signals are generally synchronized to bus clock, so EMIF signal timings are dependent on bus clock frequency. |
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