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ST7LITE49K2 数据表(PDF) 213 Page - STMicroelectronics

部件名 ST7LITE49K2
功能描述  Communication interfaces
PDF  245 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7LITE49K2 数据表(HTML) 213 Page - STMicroelectronics

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Electrical characteristics
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13.8.2
EMI (electromagnetic interference)
Based on a simple application running on the product (toggling two LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
13.8.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body model and Machine model. This test conforms to the
JESD22-A114A/A115A standard. For more details, refer to the application note AN1181.
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up
performance.
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
Table 93.
EMI emissions
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fOSC/fCPU]
Unit
8/4MHz 16/8MHz
SEMI
Peak level
VDD=5 V, SDIP32
package,TA = +25 °C,
conforming to SAE
J 1752/3
0.1 MHz to 30 MHz
29
34
dB
μV
30 MHz to 130 MHz
29
34
130 MHz to 1 GHz
21
22
SAE EMI Level
3
3.5
-
Table 94.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage (Human Body
model)
TA=+25 °C
4000
V
VESD(CDM)
Electrostatic discharge voltage (Charge Device
model)
TA=+25 °C
500



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