ST7LITE49K2 datasheet(211/245 Pages) STMICROELECTRONICS

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ST7LITE49K2

Electrical characteristics

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13.7

Memory characteristics

TA = -40 °C to 125 °C, unless otherwise specified.

Table 89.

RAM and hardware registers characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in

hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.

Halt mode (or Reset)

1.6

Table 90.

Flash program memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash

write/erase

Refer to operating

range of VDD with TA,

Section 13.3.1 on

page 195

2.4

5.5

tprog

Programming time for 1~32

bytes(1)

Up to 32 bytes can be programmed at a time.

TA=−40 to +125 °C

Programming time for 4 kbytes

TA=+25 °C

0.64

1.28

tRET

Data retention(2)

Data based on reliability test results and monitored in production.

TA=+55 °C

(3)

The data retention time increases when the TA decreases.

years

NRW

Write erase cycles

TA=+25 °C

10k

cycles

IDD

Supply current(4)

Guaranteed by Design. Not tested in production.

Read / Write / Erase

modes

fCPU = 8 MHz,

VDD = 5.5 V

2.6

No Read/No Write

mode

100

μA

Power down mode /

Halt

00.1

μA

Table 91.

Data EEPROM memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for

EEPROM Write/Erase

Refer to operating range of

VDD with TA, Section 13.3.1 on

page 195

2.4

5.5

tprog

Programming time for

1~32 bytes

TA=−40 to +125 °C

tret

Data retention(1)

Data based on reliability test results and monitored in production.

TA=+55 °C

(2)

The data retention time increases when the TA decreases.

years

NRW

Write erase cycles

TA=+25 °C

300K cycles

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