ST7DALIF2 datasheet(23/171 Pages) STMICROELECTRONICS

23 / 171 page

ST7DALIF2

Data EEPROM

23/171

Data EEPROM

7.1

Introduction

The Electrically Erasable Programmable Read Only Memory can be used as a non volatile

back-up for storing data. Using the EEPROM requires a basic access protocol described in

this chapter.

7.2

Main features

■ Up to 32 Bytes programmed in the same cycle

■ EEPROM mono-voltage (charge pump)

■ Chained erase and programming cycles

■ Internal control of the global programming cycle duration

■ Wait mode management

■ Readout protection

Figure 5.

EEPROM block diagram

7.3

Memory access

The Data EEPROM memory read/write access modes are controlled by the E2LAT bit of the

EEPROM Control/Status register (EECSR). The flowchart in Figure 6 describes these

different memory access modes.

Read operation (E2LAT=0)

The EEPROM can be read as a normal ROM location when the E2LAT bit of the EECSR

EECSR

HIGH VOLTAGE

PUMP

E2LAT

E2PGM

EEPROM

MEMORY MATRIX

(1 ROW = 32 x 8 BITS)

ADDRESS

DECODER

DATA

MULTIPLEXER

32 x 8 BITS

DATA LATCHES

ROW

DECODER

DATA BUS

128

ADDRESS BUS

ST7DALIF2 数据表(PDF) 23 Page - STMicroelectronics

ST7DALIF2 数据表(HTML) 23 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载