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ST7DALIF2 数据表(PDF) 26 Page - STMicroelectronics |
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ST7DALIF2 数据表(HTML) 26 Page - STMicroelectronics |
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26 / 171 page  Data EEPROM ST7DALIF2 26/171 If a programming cycle is interrupted (by a RESET action), the memory data will not be guaranteed. 7.6 Data EEPROM readout protection The readout protection is enabled through an option bit (see Section 22.1 on page 161). When this option is selected, the programs and data stored in the EEPROM memory are protected against readout (including a re-write protection). In Flash devices, when this protection is removed by reprogramming the Option Byte, the entire Program memory and EEPROM is first automatically erased. Note: Both Program Memory and data EEPROM are protected using the same option bit. Figure 8. Data EEPROM programming cycle LAT ERASE CYCLE WRITE CYCLE PGM tPROG READ OPERATION NOT POSSIBLE WRITE OF DATA LATCHES READ OPERATION POSSIBLE INTERNAL PROGRAMMING VOLTAGE |
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