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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ST10F296 数据表(PDF) 54 Page - STMicroelectronics |
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ST10F296 数据表(HTML) 54 Page - STMicroelectronics |
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54 / 346 page  Obsolete Product(s) - Obsolete Product(s) Internal Flash memory ST10F296E 54/346 Flash address register low (FARL) Flash address register high (FARH) FARL (0x0E 0010) FCR Reset value: 0000h 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 ADD 15 ADD 14 ADD 13 ADD 12 ADD 11 ADD 10 ADD 9 ADD 8 ADD 7 ADD 6 ADD 5 ADD 4 ADD 3 ADD 2 Reserved RW RW RW RW RW RW RW RW RW RW RW RW RW RW - Table 22. FARL register description BIt Bit name Function 15-2 ADD[15:2] Address 15:2 These bits must be written with the address of the Flash location to program in the following operations: Word program (32-bit) and double word program (64-bit). In double word program the ADD2 bit must be written to 0. 1-0 - Reserved FARH (0x0E 0012) FCR Reset value: 0000h 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Reserved ADD 20 ADD 19 ADD 18 ADD 17 ADD 16 - RWRWRW RWRW Table 23. FARH register description BIt Bit name Function 15-5 - Reserved 4-0 ADD[20:16] Address 20:16 These bits must be written with the address of the Flash location to program in the following operations: Word program and double word program. Obsolete Product(s) - Obsolete Product(s) |
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