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ST10F296 数据表(PDF) 61 Page - STMicroelectronics |
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ST10F296 数据表(HTML) 61 Page - STMicroelectronics |
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61 / 346 page ![]() Obsolete Product(s) - Obsolete Product(s) ST10F296E Internal Flash memory 61/346 5.4.3 Write protection The Flash modules have one level of write protection. Each sector of each bank of each Flash module can be software write protected by programming the related WyPx bit of the FNVWPXRH/L-FNVWPIRH/L registers at 0. 5.4.4 Temporary unprotection Bits WyPx of the FNVWPXRH/L-FNVWPIRH/L registers can be temporary unprotected by executing the set protection operation and writing 1 into these bits. Bit ACCP can be temporarily unprotected by executing the set protection operation and writing 1 into these bits, bu,t only if these write instructions are executed from the Flash modules. To restore the write and access protection bits or to execute a set protection operation and write 0 into the desired bits, the microcontroller must be reset. It is not necessary to temporarily unprotect an access protected Flash to update the code. it is sufficient to execute the updating instructions from another Flash bank. When a temporary unprotection operation is executed, the corresponding volatile register is written to 1, while the non-volatile registers bits previously written to 0 (for a protection set operation), continue to maintain the 0. For this reason, the user software must track the current protection status (for example, by using a specific RAM area), as it is not possible to deduce it by reading the non-volatile register content (a temporary unprotection cannot be detected). Table 33. Summary of access protection levels Read IFlash/ jump to IFlash Read XFlash/ jump to XFlash Read Flash registers Write Flash registers Fetching from IFlash Yes/Yes Yes/Yes Yes Yes Fetching from XFlash No/Yes Yes/Yes Yes No Fetching from IRAM No/Yes Yes/Yes Yes No Fetching from XRAM No/Yes Yes/Yes Yes No Fetching from external memory No/Yes Yes/Yes Yes No Obsolete Product(s) - Obsolete Product(s) |
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