ST10F296 datasheet(57/346 Pages) STMICROELECTRONICS

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Internal Flash memory

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5.4

Protection strategy

The protection bits are stored in non-volatile Flash cells inside the XFlash module. They are

read once at reset and stored in seven volatile registers. Before they are read from the non-

volatile cells, all available protections are forced active during reset.

Protection can be programmed using the set protection operation (see the Flash control

registers of Section 5.3), that can be executed from all the internal or external memories

except from the Flash bank, B2.

Two kinds of protection are available:

●

Write protections to avoid unwanted writings

●

Access protections to avoid piracy

5.4.1

Protection registers

This section describes the seven non-volatile protection registers and their architectural

limitations. These registers are one time programmable.

Four registers (FNVWPXRL/H-FNVWPIRL/H) are used to store the write protection fuses

respectively for each sector of the XFlash module (see ‘X’ in the sections below) and IFlash

module (see ‘I’ in the sections below). The other three registers (FNVAPR0 and

FNVAPR1L/H) are used to store the access protection fuses (common to both Flash

modules, though, with some limitations).

Flash non-volatile write protection X register low (FNVWPXRL)

FNVWPXRL (0x0E DFB0)

NVR

Delivery value: FFFFh

87654

W2PPR

Reserved

W2P2 W2P1 W2P0

RWRWRW

Table 26.

FNVWPXRL register description

Bit

Bit name

Function

W2PPR

Write protection Bank 2 non-volatile cells

This bit, if programmed at 0, disables any write access to the non-

volatile cells of Bank 2. Since these non-volatile cells are dedicated to

protection registers, once the W2PPR bit is set, the configuration of

protection setting is frozen, and can only be modified by executing a

temporary write unprotection operation.

14-3

Reserved

2-0

W2P[2:0]

Write protection Bank 2 sectors 2-0 (XFlash)

These bits, if programmed at 0, disable any write access to the sectors

of Bank 2 (XFlash).

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