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ST10F296 数据表(PDF) 65 Page - STMicroelectronics |
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ST10F296 数据表(HTML) 65 Page - STMicroelectronics |
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65 / 346 page ![]() Obsolete Product(s) - Obsolete Product(s) ST10F296E Internal Flash memory 65/346 5.6 Write operation summary Write operations are generally started with the following three steps: 1. The first instruction is used to select the desired operation by setting its corresponding selection bit in the Flash control register 0. This instruction is also used to select in which Flash Module to apply the write operation (by setting/resetting the SMOD bit). 2. The second step is the definition of the address and data for programming or the sectors or banks to erase. 3. The third instruction is used to start the write operation, by setting the start bit, WMS, in the FCR0 register. Once selected, but not yet started, one operation can be canceled by resetting the operation selection bit. A summary of the available Flash module write operations are shown in Table 34. Table 34. Flash write operations Operation Select bit Address and data Start bit Word program (32-bit) WPG FARL/FARH FDR0L/FDR0H WMS Double word program (64-bit) DWPG FARL/FARH FDR0L/FDR0H FDR1L/FDR1H WMS Sector erase SER FCR1L/FCR1H WMS Set protection SPR FDR0L/FDR0H WMS Program/erase suspend SUSP None None Obsolete Product(s) - Obsolete Product(s) |
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