ST7DALIF2 datasheet(140/171 Pages) STMICROELECTRONICS

140 / 171 page

Electrical characteristics

ST7DALIF2

140/171

Table 79.

FLASH program memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash

write/erase

2.4

5.5

tprog

Programming time for 1~32 bytes

(1)

Up to 32 bytes can be programmed at a time.

TA=−40 to +85° C

Programming time for 1.5 kBytes

TA=+25° C

0.24

0.48

tRET

Data retention (2)

Data based on reliability test results and monitored in production.

TA=+55° C

(3)

The data retention time increases when the TA decreases.

years

NRW

Write erase cycles

TA=+25° C

10K

(4)

Design target value pending full product characterization.

cycles

IDD

Supply current

Read / Write / Erase

modes

fCPU = 8 MHz, VDD =

5.5 V

2.6(5)

Guaranteed by design. Not tested in production.

No Read/No Write

Mode

100

μA

Power down mode /

Halt

00.1

μA

Table 80.

EEPROM data memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for

EEPROM write/erase

2.4

5.5

tprog

Programming time for 1~32

bytes

TA=−40 to +85°C

tret

Data retention (1)

Data based on reliability test results and monitored in production.

TA=+55°C

(2)

The data retention time increases when the TA decreases.

years

NRW

Write erase cycles

TA=+25°C

300K

(3)

Design target value pending full product characterization.

cycles

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