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TNETV1002IDZHK 数据表(PDF) 92 Page - Texas Instruments |
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TNETV1002IDZHK 数据表(HTML) 92 Page - Texas Instruments |
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92 / 102 page ![]() Electrical Specifications 82 June 2001 -- Revised December 2002 SPRS180C The ARM SRAM read timing requirements listed in Table 6--37 represent back-to-back read operations to a zero-wait-state SRAM device. Table 6--37. ARM SRAM Timing Requirements (Read) MIN MAX UNIT 1 td(CSL-AV) Delay time, address valid from CS low -- 3 4 ns 2 td(CSL--BHEV1) Delay time, byte enable high valid 1 from CS low -- 3 4 ns 3 td(CSL-OEL) Delay time, output enable low from CS low -- 3 4 ns 4 td(CSL-AIV1) Delay time, address invalid 1 from CS low E-- 3† E+ 4† ns 5 tw(CSL) Pulse duration, CS low 2E -- 3.5† 2E + 3.5† ns 6 tsu(CSL-DV1) Setuptime, datavalid1fromCS low E-- 12† ns 7 td(CSL--AIV2) Delay time, address invalid 2 from CS low 2E -- 3† 2E + 4† ns 8 th(CSL--DIV1) Hold time, data invalid 1 from CS low E-- 1† ns 9 tsu(CSL--DV2) Setuptime, datavalid2fromCS low 2E -- 12† ns 10 td(CSL--BEIV1) Delay time, byte enable invalid 1 from CS low E-- 4† E+ 4† ns 11 td(CSL--BEV2) Delay time, byte enable valid 2 from CS low E-- 2† E+ 6† ns 12 th(CSL--DIV2) Hold time, data invalid 2 from CS low 2E -- 1† ns 13 td(CSL--BEIV2) Delay time, byte enable invalid 2 from CS low 2E -- 4† 2E + 4† ns 14 td(CSL--OEH) Delay time, output enable high from CS low 2E -- 3† 2E + 4† ns † E= tw(ARM--R) |
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