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H8SX1663 数据表(PDF) 322 Page - Renesas Technology Corp |
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H8SX1663 数据表(HTML) 322 Page - Renesas Technology Corp |
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322 / 1158 page ![]() Section 6 Bus Controller (BSC) Rev.1.00 Jun. 07, 2006 Page 270 of 1102 REJ09B0294-0100 (1) Fast-Page Mode Operation Timing When access cycles to the SDRAM space are continued and the row addresses of the consecutive two cycles are the same, a column address output cycle follows. The row address bits to be compared are decided by bits MXC1 and MXC0 in DRAMCR. A fast-page mode access is performed when the access data size exceeds the bus width of the SDRAM and when consecutive accesses to the SDRAM are generated. Figures 6.72 and 6.73 show longword access timing of the 16-bit bus SDRAM and word access timing of the 8-bit bus SDRAM, respectively. T p T r T c1 T c2 T c1 T c2 CS Precharge-sel RAS CAS WE CKE PALL ACTV WRIT NOP NOP DQMLU DQMLL BS RD/ WR WRIT Address bus Row address Column address 1 Column address 2 SD φ D7 to D0 D15 to D8 Row address High Figure 6.72 Longword Write Timing in 16-Bit Access Space (BE = 1, RCDM = 0) |
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