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DSP56362P 数据表(PDF) 48 Page - Freescale Semiconductor, Inc |
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DSP56362P 数据表(HTML) 48 Page - Freescale Semiconductor, Inc |
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48 / 152 page  External Memory Expansion Port (Port A) DSP56362 Technical Data, Rev. 4 3-22 Freescale Semiconductor 153 RD assertion to data valid tGA 1.75 × T C − 6.5 — 15.4 ns 154 RD deassertion to data not valid7 tGZ 0.0 — ns 155 WR assertion to data active 0.75 × T C − 0.3 9.1 — ns 156 WR deassertion to data high impedance 0.25 × T C —3.1 ns 1 The number of wait states for Page mode access is specified in the DCR. 2 The refresh period is specified in the DCR. 3 The asynchronous delays specified in the expressions are valid for DSP56362. 4 All the timings are calculated for the worst case. Some of the timings are better for specific cases (e.g., t PC equals 3 × TC for read-after-read or write-after-write sequences). 5 There are not any fast enough DRAMs to fit to two wait states Page mode @ 100MHz. See Figure 3-13. 6 BRW[1:0] (DRAM Control Register bits) defines the number of wait states that should be inserted in each DRAM out-of-page access. 7 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t OFF and not tGZ. Table 3-11 DRAM Page Mode Timings, Three Wait States1, 2, 3, 4 No. Characteristics Symbol Expression 100 MHz Unit Min Max 131 Page mode cycle time for two consecutive accesses of the same direction Page mode cycle time for mixed (read and write) accesses. tPC 4 × T C 3.5 x Tc 40.0 35.0 — — ns 132 CAS assertion to data valid (read) tCAC 100 MHz: 2 × T C − 7.0 — 13.0 ns 133 Column address valid to data valid (read) tAA 100 MHz: 3 × T C − 7.0 — 23.0 ns 134 CAS deassertion to data not valid (read hold time) tOFF 0.0 — ns 135 Last CAS assertion to RAS deassertion tRSH 2.5 × T C − 4.0 21.0 — ns 136 Previous CAS deassertion to RAS deassertion tRHCP 4.5 × T C − 4.0 41.0 — ns 137 CAS assertion pulse width tCAS 2 × T C − 4.0 16.0 — ns 138 Last CAS deassertion to RAS assertion5 • BRW[1:0] = 00 • BRW[1:0] = 01 • BRW[1:0] = 10 • BRW[1:0] = 11 tCRP 2.25 × T C − 6.0 3.75 × T C − 6.0 4.75 × T C − 6.0 6.75 × T C − 6.0 — — 41.5 61.5 — — — — ns Table 3-10 DRAM Page Mode Timings, Two Wait States1, 2, 3, 4 (continued) No. Characteristics Symbol Expression 80 MHz Unit Min Max |
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