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DSP56362P 数据表(PDF) 61 Page - Freescale Semiconductor, Inc |
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DSP56362P 数据表(HTML) 61 Page - Freescale Semiconductor, Inc |
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61 / 152 page ![]() External Memory Expansion Port (Port A) DSP56362 Technical Data, Rev. 4 Freescale Semiconductor 3-35 186 CAS assertion to data not valid (write) tDH 6.25 × T C − 4.0 58.5 — 48.1 — ns 187 RAS assertion to data not valid (write) tDHR 9.75 × T C − 4.0 93.5 — 77.2 — ns 188 WR assertion to CAS assertion tWCS 9.5 × T C − 4.3 90.7 — 74.9 — ns 189 CAS assertion to RAS assertion (refresh) tCSR 1.5 × T C − 4.0 11.0 — 8.5 — ns 190 RAS deassertion to CAS assertion (refresh) tRPC 4.75 × T C − 4.0 43.5 — 35.6 — ns 191 RD assertion to RAS deassertion tROH 15.5 × T C − 4.0 151.0 — 125.2 — ns 192 RD assertion to data valid tGA 14 × T C − 5.7 — 134.3 — 111.0 ns 193 RD deassertion to data not valid3 tGZ 0.0 — 0.0 — ns 194 WR assertion to data active 0.75 × T C − 0.3 7.2 — 5.9 — ns 195 WR deassertion to data high impedance 0.25 × T C —2.5 —2.1 ns 1 The number of wait states for out-of-page access is specified in the DCR. 2 The refresh period is specified in the DCR. 3 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t OFF and not tGZ. 4 Either t RCH or tRRH must be satisfied for read cycles. Table 3-16 DRAM Out-of-Page and Refresh Timings, Fifteen Wait States 100 and 120MHz1, 2 (continued) No. Characteristics3 Symbol Expression 100 MHz 120 MHz Unit Min Max Min Max |
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