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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8SX1663 数据表(PDF) 302 Page - Renesas Technology Corp |
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H8SX1663 数据表(HTML) 302 Page - Renesas Technology Corp |
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302 / 1158 page  Section 6 Bus Controller (BSC) Rev.1.00 Jun. 07, 2006 Page 250 of 1102 REJ09B0294-0100 Some DRAMs having the self-refresh mode needs longer precharge time of the RAS signal immediately after the self-refresh mode than that in normal operation. From one to seven of precharge cycles immediately after a self-refresh cycle can be inserted. Precharging is also performed according to bits TPC1 and TPC0 in DRACCR. Set the precharge time so that the precharge time immediately after a self-refresh cycle is optimal. Figure 6.57 shows a timing example when one precharge cycle is added. T p T r T c1 T c2 TRp1 TRc4 TRc3 Address bus Software standby DRAM space write B φ RD OE Data bus RAS LUCAS LLCAS WE BS RD/ WR High High High Figure 6.57 Timing Example when 1 Precharge Cycle Added |
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