ZUSBOPTSC01ZACG datasheet(169/282 Pages) ZILOG

169 / 282 page

PS022827-1212

P R E L I M I N A R Y

Operation

Z8 Encore! XP® F082A Series

Product Specification

152

The byte at each address of the Flash memory cannot be programmed (any bits written

to 0) more than twice before an erase cycle occurs. Doing so may result in corrupted data

at the target byte.

Page Erase

The Flash memory can be erased one page (512 bytes) at a time. Page Erasing the Flash

memory sets all bytes in that page to the value FFH. The Flash Page Select Register identi-

fies the page to be erased. Only a page residing in an unprotected sector can be erased.

With the Flash Controller unlocked and the active page set, writing the value 95h to the

Flash Control Register initiates the Page Erase operation. While the Flash Controller exe-

cutes the Page Erase operation, the eZ8 CPU idles but the system clock and on-chip

peripherals continue to operate. The eZ8 CPU resumes operation after the Page Erase

operation completes. If the Page Erase operation is performed using the On-Chip Debug-

ger, poll the Flash Status Register to determine when the Page Erase operation is complete.

When the Page Erase is complete, the Flash Controller returns to its locked state.

Mass Erase

The Flash memory can also be Mass Erased using the Flash Controller, but only by using

the On-Chip Debugger. Mass Erasing the Flash memory sets all bytes to the value FFH.

With the Flash Controller unlocked and the Mass Erase successfully enabled, writing the

value 63H to the Flash Control Register initiates the Mass Erase operation. While the

Flash Controller executes the Mass Erase operation, the eZ8 CPU idles but the system

clock and on-chip peripherals continue to operate. Using the On-Chip Debugger, poll the

Flash Status Register to determine when the Mass Erase operation is complete. When the

Mass Erase is complete, the Flash Controller returns to its locked state.

Flash Controller Bypass

The Flash Controller can be bypassed and the control signals for the Flash memory

brought out to the GPIO pins. Bypassing the Flash Controller allows faster Row Program-

ming algorithms by controlling the Flash programming signals directly.

Row programming is recommended for gang programming applications and large volume

customers who do not require in-circuit initial programming of the Flash memory. Page

Erase operations are also supported when the Flash Controller is bypassed.

For more information about bypassing the Flash Controller, refer to the Third-Party Flash

Programming Support for Z8 Encore! MCUs Application Note (AN0117), which is avail-

able for download on www.zilog.com.

Caution:

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