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DRA821U4...ALM 数据表(PDF) 135 Page - Texas Instruments |
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DRA821U4...ALM 数据表(HTML) 135 Page - Texas Instruments |
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135 / 252 page ![]() Table 7-21. WKUP_OSC0 Switching Characteristics – Crystal Mode NAME DESCRIPTION MIN TYP MAX UNIT CXI XI Capacitance 1.55 pF CXO XO Capacitance 1.35 pF CXIXO XI to XO Mutual Capacitance 0.01 pF ts Start-up Time 9.5(1) ms (1) TI strongly encourages each customer to submit samples of the device to the resonator/crystal vendors for validation. The vendors are equipped to determine what load capacitors will best tune their resonator/crystal to the microcontroller device for optimum startup and operation over temperature/voltage extremes. VDDA_WKUP WKUP_OSC0_XO t sX Time VSS VDDA_WKUP (min.) VDD_WKUP (min.) VSS VDD_WKUP J7ES_WKUP_OSC_STARTUP_04 Figure 7-25. WKUP_OSC0 Start-up Time 7.9.4.1.1.1 Load Capacitance The crystal circuit must be designed such that it applies the appropriate capacitive load to the crystal, as defined by the crystal manufacturer. The capacitive load, CL, of this circuit is a combination of discrete capacitors CL1, CL2, and several parasitic contributions. PCB signal traces which connect crystal circuit components to WKUP_OSC0_XI and WKUP_OSC0_XO have parasitic capacitance to ground, CPCBXI and CPCBXO, where the PCB designer should be able to extract parasitic capacitance for each signal trace. The WKUP_OSC0 circuits and device package have combined parasitic capacitance to ground, CPCBXI and CPCBXO, where these parasitic capacitance values are defined in Table 7-21. J7ES_WKUP_OSC_CC_05 C PCBXI C PCBXO C L1 C L2 PCB Signal Traces Crystal Circuit Components WKUP_OSC0_XO WKUP_OSC0_XI C XI C XO Device Figure 7-26. Load Capacitance www.ti.com DRA821U-Q1 SPRSP57D – APRIL 2020 – REVISED DECEMBER 2022 Copyright © 2022 Texas Instruments Incorporated Submit Document Feedback 135 Product Folder Links: DRA821U-Q1 |
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