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DRA821U4...ALM 数据表(PDF) 135 Page - Texas Instruments

部件名 DRA821U4...ALM
功能描述  DRA821 Jacinto™ Processors
PDF  252 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

DRA821U4...ALM 数据表(HTML) 135 Page - Texas Instruments

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Table 7-21. WKUP_OSC0 Switching Characteristics – Crystal Mode
NAME
DESCRIPTION
MIN
TYP
MAX UNIT
CXI
XI Capacitance
1.55
pF
CXO
XO Capacitance
1.35
pF
CXIXO
XI to XO Mutual Capacitance
0.01
pF
ts
Start-up Time
9.5(1)
ms
(1)
TI strongly encourages each customer to submit samples of the device to the resonator/crystal vendors for validation. The
vendors are equipped to determine what load capacitors will best tune their resonator/crystal to the microcontroller device
for optimum startup and operation over temperature/voltage extremes.
VDDA_WKUP
WKUP_OSC0_XO
t
sX
Time
VSS
VDDA_WKUP (min.)
VDD_WKUP (min.)
VSS
VDD_WKUP
J7ES_WKUP_OSC_STARTUP_04
Figure 7-25. WKUP_OSC0 Start-up Time
7.9.4.1.1.1 Load Capacitance
The crystal circuit must be designed such that it applies the appropriate capacitive load to the crystal, as defined
by the crystal manufacturer. The capacitive load, CL, of this circuit is a combination of discrete capacitors
CL1, CL2, and several parasitic contributions. PCB signal traces which connect crystal circuit components to
WKUP_OSC0_XI and WKUP_OSC0_XO have parasitic capacitance to ground, CPCBXI and CPCBXO, where the
PCB designer should be able to extract parasitic capacitance for each signal trace. The WKUP_OSC0 circuits
and device package have combined parasitic capacitance to ground, CPCBXI and CPCBXO, where these parasitic
capacitance values are defined in Table 7-21.
J7ES_WKUP_OSC_CC_05
C
PCBXI
C
PCBXO
C
L1
C
L2
PCB
Signal Traces
Crystal Circuit
Components
WKUP_OSC0_XO
WKUP_OSC0_XI
C
XI
C
XO
Device
Figure 7-26. Load Capacitance
www.ti.com
DRA821U-Q1
SPRSP57D – APRIL 2020 – REVISED DECEMBER 2022
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: DRA821U-Q1



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