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H5GQ2H24AFR-R0C 数据表(PDF) 68 Page - Hynix Semiconductor

部件名 H5GQ2H24AFR-R0C
功能描述  2Gb (64Mx32) GDDR5 SGRAM
PDF  172 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H5GQ2H24AFR-R0C 数据表(HTML) 68 Page - Hynix Semiconductor

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
68
H5GQ2H24AFR
Figure 38. Mode Register Set Timings
 5.5. ACTIVATION
Before any READ or WRITE commands can be issued to a bank in the GDDR5 SGRAM, a row in that bank 
must be “opened”. This is accomplished by the ACTIVE command (see Figure 39): BA0 ‐BA3 select the 
bank, and A0‐A12 select the row to be activated. Once a row is open, a READ or WRITE command could 
be issued to that row, subject to the tRCD specification. 
A subsequent ACTIVE command to another row in the same bank can only be issued after the previous 
row has been closed (precharged). The minimum time interval between two successive ACTIVE com‐
mands on the same bank is defined by tRC. A minimum time, tRAS, must have elapsed between opening 
and closing a row.
A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, 
which results in a reduction of total row‐access overhead. The minimum time interval between two suc‐
cessive ACTIVE commands on different banks to different bank groups is defined by tRRDS. With bank 
groups enabled, the minimum time interval between two successive ACTIVE commands to different 
banks in the same bank group is defined by tRRDL. In all other cases the interval is defined by tRRDS
<Link>Figure  shows the tRCD and tRRD definition.
CK#
CK
CMD
A.C. = any command allowed in bank idle state
tRP
tMRD
Updating Setting
New Setting
Old Setting
NOP
PRE
ALL
NOP
MRS
NOP
A.C.
NOP



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