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H5GQ2H24AFR-R0C 数据表(PDF) 43 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C 数据表(HTML) 43 Page - Hynix Semiconductor |
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43 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 43 H5GQ2H24AFR WRITE Latency (WLmrs) The WRITE latency (WLmrs) is the delay in clock cycles used in the calculation of the total WRITE latency (WL) between the registration of a WRITE or WRTR command and the availability of the first piece of input data. DRAM vendor specifications should be checked for value(s) of WLmrs supported. The full WRITE latency definition can be found in the section entitled OPERATION. When the WRITE latencies are set to small values (i.e. 1,2,... clocks), the input receivers never turn off, in turn, raising the operating power. When the WRITE latency is set to higher values (i.e. .. 6, 7 clocks) the input receivers turn on when the WRITE or WRTR command is registered. Refer to vendor datasheets for value(s) of WLmrs where the input receivers are always on or only turn on when the WRITE or WRTR command is registered Speed Allowable Operating Frequency (Gbps) WL 7 WL 6 WL 5 WL 4 WL 3 WL 2 WL 1 6.0Gbps 5.5Gbps 5.0Gbps 4.5Gbps 4.0Gbps CAS Latency (CLmrs) The CAS latency (CLmrs) is the delay in clock cycles used in the calculation of the total READ latency (CL) between the registration of a READ or RDTR command and the availability of the first piece of output data. By default CLmrs is specified by bits A3‐A6, defining a CLmrs range of 5 to 20 tCK. DRAM vendor specifications should be checked for value(s) of CLmrs supported. The full READ latency definition can be found in the section entitled OPERATION Speed RDBI ON/OFF Allowable Operating Frequency (Gbps) CL 20 CL 19 CL 18 CL 17 CL 16 CL 15 CL 14 CL 13 CL 12 6.0Gbps OFF ON 5.5Gbps OFF ON 5.0Gbps OFF ON 4.5Gbps OFF ON 4.0Gbps OFF ON |
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