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H5GQ2H24AFR-R0C 数据表(PDF) 93 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C 数据表(HTML) 93 Page - Hynix Semiconductor |
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93 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 93 H5GQ2H24AFR Figure 58. Single READ with EDC EDC Hold Pattern EDC Hold Pattern EDC EDC n+7 n Bank a, Col n Col n CK CK# DQ DBI# CL = CLmrs = 6 T0 T1 T6 T7 T7n T6n T8 T10 T11 T12 T9 EDC WCK# CRCRL = 4 DONʹT CARE TRANSITIONING DATA DO DO DBI DBI n+7 n+7 n n WCK 3. Before the READ command, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD must be met. 4. tWCK2DQO = 0 is shown for illustration purposes. 1. CLmrs = 6 and CRCRL = 4 are shown as examples. Actual supported values will be found in the MR and AC timings sections. 2. WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes. WCK2CK training determines the needed offset between WCK and CK. Notes: ADDRESS NOP READ NOP NOP NOP NOP NOP NOP NOP ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) COMMAND T10n T11n |
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