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H5GQ2H24AFR-R0C 数据表(PDF) 69 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C 数据表(HTML) 69 Page - Hynix Semiconductor |
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69 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 69 H5GQ2H24AFR The row remains active until a PRECHARGE command (or READ or WRITE command with Auto Pre‐ charge) is issued to the bank. Figure 39. Active Command Figure 40. Bank Activation Command Cycle A8‐A11 (A12) A0, A1,A6,A7 LOW RA = Row Address CA = Column Address BA = Bank Address Row Activation RA RA CS# WE# CAS# RAS# CKE# DONʹT CARE BA RA BA0‐BA3 A2‐A5 BA0,1,2,3 A2,3,4,5 A8,9,10,11, (12) A0,1,6,7 CK CK# CK# CK CMD ADDR BA RA RA BA CA BA BA RA RA tRCD tRP tRAS tRC BA = bank address; RA = row address; CA = column address tRCD = tRCDRD, tRCDWR, tRCDRTR, tRCDWTR or tRCDLTR, depending on command (*) = could also be PREALL NOP ACT NOP RD/WR NOP PRE* NOP ACT NOP Donʹt Care T0 T1 T2 Ta0 Ta1 Tb0 Tb1 Tc1 Tc0 |
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