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H5GQ2H24AFR-R0C 数据表(PDF) 23 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C 数据表(HTML) 23 Page - Hynix Semiconductor |
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23 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 23 H5GQ2H24AFR Figure 9: Address Training Timing Table 10 defines the correspondence between address bits and DQ/DBI#. Devices configured to x16 mode reflect the address on the two bytes being enabled in that mode, which are bytes 0 and 2 for MF=0 and bytes 1 and 3 for MF=1 configurations. Devices configured to x32 mode reflect the address on the same DQ as in x16 mode; in addition they are allowed but not required to reflect the address on those bytes that are disabled in x16 mode, thus reflecting each address twice. Devices not supporting an RFU pin shall drive a logic High on the DBI# pins. Table 9 AC timings in Address Training Mode Parameter Symbol Min Max Unit READ command to data out delay tADR 0.5*tCK+0 0.5*tCK+10 ns ADT off to DQ/DBI# in ODT state delay tADZ ‐‐ 0.5*tCK+10 ns CK# CK tADR Even DQ Notes: 1) READ command encoding: CS# = L, RAS# = H, CAS# = L, WE# = H 2) ADRxR = 1st half of address x, sampled on rising edge of CK; ADRxR# = 2nd half of address x, sampled on rising edge of CK# 3) Addresses sampled on rising edge of CK are returned on even DQ after tADR; addresses sampled on rising edge of CK# are returned on odd DQ simultaneously with even DQ 4) DQs are enabled when ADT bit in Mode Register 15 set to 1 (Enter Address Training Mode) DQs are disabled after tADZ when ADT bit in Mode Register 15 set to 0 (Exit Address Training Mode) ADRx R# CMD ADDR ADRy R ADRy R# Odd DQ tADR tMRD MR15 A10=1 ADRx R Donʹt Care ADRx R ADRy R ADRx R# ADRy R# ADRz R ADRz R ADRz R# tADR MR15 A10=0 tADZ ADRz R# MRS NOP READ (*) NOP READ (*) NOP READ (*) NOP MRS NOP NOP NOP NOP |
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