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H5GQ2H24AFR-R0C 数据表(PDF) 36 Page - Hynix Semiconductor |
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H5GQ2H24AFR-R0C 数据表(HTML) 36 Page - Hynix Semiconductor |
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36 / 172 page ![]() This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsability for use of circuits described. No patent licenses are implied. Rev. 1.2 /Nov. 2011 36 H5GQ2H24AFR RDTR Command A RDTR burst is initiated with a RDTR command as shown in Figure 19. No bank or column addresses are used as the data is read from the internal READ FIFO, not the array. The length of the burst initiated with a RDTR command is eight. There is no interruption nor truncation of RDTR bursts. Figure 19: RDTR Command A RDTR command may only be issued when a bank is open or a refresh is in progress and bit A2 in MR5 is set to 0 to allow training during refresh. RDBI and RDCRC must be enabled to read the DBI and EDC bits, respectively, with the RDTR command. If not set, the DBI# pins will remain in ODT state, and the EDC pins will drive the EDC hold pattern. In case of the RDQS mode, the EDC pin functions like with a normal READ in this mode. The DBI# pin behaves like a DQ, and no encoding with DBI is performed. An amount of RDTR commands greater than the FIFO depth is allowed and shall result in a looping of the FIFO’s data output. The FIFO depth from which the RDTR data is read must be a number between 4‐6 and must be specified by the DRAM vendor. The FIFO depth is read via the Vendor ID function. During RDTR bursts, the first valid data‐out element will be available after the CAS latency (CL). The latency is the same as for READ. The data on the EDC pins comes with additional CRC latency (tCRCRD) after the CL. Upon completion of a burst, assuming no other RDTR command has been initiated, all DQ and DBI# pins will drive a value of ʹ1ʹ and the ODT will be enabled at a maximum of 1 tCK later. The drive value and ter‐ mination value may be different due to separately defined calibration offsets. If the ODT is disabled, the pins will drive Hi‐Z. CS# WE# CAS# RAS# CKE# A9 (A12) A1 A8,A10,A11 BA0‐BA3 A2‐A5 LOW RDTR CK CK# 0,1,1 A7,A0,A6 |
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