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H5GQ2H24AFR-R0C 数据表(PDF) 96 Page - Hynix Semiconductor

部件名 H5GQ2H24AFR-R0C
功能描述  2Gb (64Mx32) GDDR5 SGRAM
PDF  172 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H5GQ2H24AFR-R0C 数据表(HTML) 96 Page - Hynix Semiconductor

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This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsability for use of circuits described. No patent licenses are implied.
Rev. 1.2 /Nov. 2011
96
H5GQ2H24AFR
Figure 61. READ to WRITE
DBI
DBI
n+7
n
DO
DO
n+7
n
DO
DO
DBI
DBI
m+7
m+7
m
m
WL = WLmrs = 3
CL = CLmrs = 6
Bank a,
Col m
Col m
T9
T11
T12
T0
T1
T6
T7
T7n
T8
T6n
T10
T10n
DONʹT CARE
TRANSITIONING DATA
Bank b,
Col n
Col n
tRTW
T11n
2.  WCK and CK are shown aligned (tWCK2CKPIN=0, tWCK2CK=0) for illustration purposes.  WCK2CK training determines the needed offset between WCK and CK.
respectively must be met.
1.  WLmrs = 3 and CLmrs = 6 is shown as an example.  Actual supported values will be found in the MR and AC timings sections.
3.  EDC may be on or off.  See Figure 58 for EDC Timing.
5.  For WRITE operations it is important that the latching point meet the data valid window requirements, which may or may not be center aligned at the pins. 
6.  Before the READ and WRITE commands, an ACTIVE (ACT) command is required to be issued to the GDDR5 SGRAM and tRCDRD or tRCDWR
4.  tWTR = tWTRL when bank groups is enabled and both WRITE and READ access banks in the same bank group, otherwise tWTR=tWTRS.
Notes:
7.  tWCK2DQI, tWCKDQO = 0 is shown for illustration purposes.
NOP
READ
NOP
WRITE
NOP
NOP
NOP
NOP
NOP
CK
CK#
COMMAND
ADDRESS
DQ
DBI#
WCK#
WCK
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